Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/nitrogen/silicon tetrachloride discharges at room temperature
نویسندگان
چکیده
منابع مشابه
Indium Antimonide Nanowires: Synthesis and Properties
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is...
متن کاملNonlinear Photogeneration of Carriers in an Indium Antimonide Etalon
The photo-Hall technique has been used to investigate the properties of the InSb optical absorption band-edge. An accurate theoretical explanation of the linear absorption results is given, together with new data on the nonlinear aspects of the band-tail. A value of 1.1 x 10-18 for a has been calculated by monitoring the carrier generation during bistability.
متن کاملSpectroscopy of spin-orbit quantum bits in indium antimonide nanowires.
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin...
متن کاملFast spin-orbit qubit in an indium antimonide nanowire.
Because of the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic differences in their g factors. B...
متن کاملSimulations of Indium Arsenide / Gallium Antimonide Superlattice Barrier Based Thermophotovoltaic Cells
Thermophotovoltaic (TPV) cells are semiconductor devices which convert radiated heat directly into electricity. This work investigates extending the operational wavelength of such devices into the long-wavelength infrared regime. Specifically, this work explores the use a barrier layer inserted into a p-n junction to suppress recombination pathways. Dark current simulations have been performed ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1995
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.115223